Hdr Année : 2022

HDR Magali Grégoire Silicide in microelectronics: phase sequence, nanoscale effect, and degradation

HDR Magali Grégoire Les siliciures en microélectronique : séquence de phase, effet nanométrique et dégradation

Résumé

Silicide layers in microelectronics devices are widely used to provide an improved contact to active regions of silicon and allow in that way better performances. In this manuscript, I detail all the results we have on a very large spread of thin film systems as Ni(Pt), Co, Ti, III/V and also Metal-Isolant-Semiconductor contacts over the last 15 years to provide a deep overview of our understanding of silicide formation and the remaining challenges we face to. Thus, the success criteria needed for current technologies under development will be presented. Silicide integrations as silicide first and silicide last will then be described. In addition, the technological issues related to silicide formation, morphological and thermal instabilities are formerly detailed. Our research on innovative contacts will be summarized for 10 nm planar technologies, based on Metal Isolator Semiconductor (MIS) integration, and for advanced photonics devices, including a hybrid laser on Si, formed by III/V layers stacking. The current and future needs in the field of silicide research is then discussed. A specific work is requested in nano-scale dimensions to identify if there is or not an acceleration in the phase transformation. Even though Co silicide formation has been widely studied and well-integrated in the last decade, proper Co silicide formation for dense and up-to-date sub-90 nm CMOS devices has never been demonstrated or reported. Therefore, new studies on the reduction of CoSi grains size, have been launched and will be pursued in the next years to extend the Co silicide brick to the 65 nm node technology. Recent results of advanced contacts and mainly TiSix contacts, lead of course to several new investigations, detailed here. On top of that, the characterization of phase sequence and C49-C54 transition temperature in real contacts after UL-NLA treatment is needed.

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tel-04193978 , version 1 (01-09-2023)

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  • HAL Id : tel-04193978 , version 1

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Magali Gregoire. HDR Magali Grégoire Silicide in microelectronics: phase sequence, nanoscale effect, and degradation. Physics [physics]. Aix-Marseille Universite, 2022. ⟨tel-04193978⟩
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