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Article Dans Une Revue Journal de Physique IV Proceedings Année : 1996

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

G. Ghibaudo
F. Balestra

Résumé

A brief review of the main physical results about the low temperature characterization and modeling of Si CMOS devices is presented. More specifically, the carrier mobility law, the saturation velocity, the short channel effects, the impact ionization phenomenon, the hot carrier effects or the parasitic leakage current are physically discussed.

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jpa-00254219 , version 1 (04-02-2008)

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G. Ghibaudo, F. Balestra. Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature. Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-3-C3-11. ⟨10.1051/jp4:1996301⟩. ⟨jpa-00254219⟩

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