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Article Dans Une Revue Journal de Physique IV Proceedings Année : 1996

Effect of Gold on the Nickel/Silicon Thin Film Reaction

Dominique Mangelinck
P. Gas
  • Fonction : Auteur
J. Gay
  • Fonction : Auteur
B. Pichaud
  • Fonction : Auteur

Résumé

The solid state reaction between a nickel thin film and a silicon substrate leads to the sequential formation of Ni2Si, NiSi and NiSi2. The growth of the two first silicides occurs at low temperature (200-300°C) and is controlled by nickel diffusion. NiSi2 is only formed in a brutal manner at high temperature which indicates a nucleation controlled formation. We show that the addition of gold to the nickel film drastically affects these characteristics : Ni2Si and NiSi appear simultaneously and the nucleation temperature of NiSi2 is lowered. The solubility of gold in the three silicides is limited which induces a precipitation of gold. Depending on temperature this precipitation takes various forms : gold enriched surface layer or gold clusters at inner interfaces.

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jpa-00254191 , version 1 (04-02-2008)

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Dominique Mangelinck, P. Gas, J. Gay, B. Pichaud. Effect of Gold on the Nickel/Silicon Thin Film Reaction. Journal de Physique IV Proceedings, 1996, 06 (C2), pp.C2-97-C2-102. ⟨10.1051/jp4:1996213⟩. ⟨jpa-00254191⟩

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