Collapse and large signal modelling of GaAs field effect transistors at 77 K
Résumé
A complete electrical characterization of different types of GaAs field effect transistors at liquid nitrogen temperature is performed. The trapping-detrapping mechanisms on deep levels are particularly adressed and a method is proposed to circumvent the collapse phenomenon which otherwise limits the electrical performances. From these measurements a HEMT non-linear model is extracted and is found efficient for the prediction of the large signal power out versus power in characteristic of a cooled HEMT. A further application could be the optimized design of a cooled low phase noise oscillator.
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Articles anciens
Origine : Accord explicite pour ce dépôt
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