Optical characterization of CdTe/ZnTe semiconductor wires and dots
Résumé
Arrays of wires and dots have been fabricated by electron beam lithography and Ar+ ion beam etching from CdTe/ZnTe quantum wells. Low temperature photoluminescence coming out from these structures is still observed for the smallest wires (40 nm) whereas for the dots, the detection limit occurs for lateral dimensions of 100 nm.
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Articles anciens
Origine : Accord explicite pour ce dépôt
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