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Article Dans Une Revue Journal de Physique IV Proceedings Année : 1993

A study of AlN-Si3N4 codeposits using the L.P.C.V.D. technique

F. Henry
  • Fonction : Auteur
B. Armas
  • Fonction : Auteur
M. Balat
R. Berjoan
  • Fonction : Auteur
C. Combescure

Résumé

We have studied the codeposition of aluminum nitride and silicon nitride, using aluminum trichloride and silicon tetrachloride as vectors of aluminum and silicon respectively, ammonia as source of nitrogen, and nitrogen as carrier gas. A preliminary thermodynamic study allowed us to determine the influence of pressure, temperature and gas composition on the Al, Si, N, Hl Cl system. Particularly, we have shown that the Al/Si ratio as well as the quantity of ammonia play a crucial role in the composition of the codeposit. An experimental study has been carried out using a hot-wall reactor. At 1253 K with a pressure of 133 Pa, we have obtained deposits varying from AlN to Si3N4, via intermediate compositions, by varying the reactive gas mixture. The codeposits have been characterized using various methods such as X-ray diffraction, Auger, X.P.S., S.E.M. and E.P.M.A..

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jpa-00251429 , version 1 (04-02-2008)

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F. Henry, B. Armas, M. Balat, R. Berjoan, C. Combescure. A study of AlN-Si3N4 codeposits using the L.P.C.V.D. technique. Journal de Physique IV Proceedings, 1993, 03 (C3), pp.C3-519-C3-526. ⟨10.1051/jp4:1993372⟩. ⟨jpa-00251429⟩

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