Transport phenomena in a cold wall vertical reactor for metalorganic vapor phase growth of β-SiC layers - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal de Physique IV Proceedings Année : 1993

Transport phenomena in a cold wall vertical reactor for metalorganic vapor phase growth of β-SiC layers

H. Chehouani
  • Fonction : Auteur
S. Benet
  • Fonction : Auteur
B. Armas
  • Fonction : Auteur
C. Combescure
A. Figueras
  • Fonction : Auteur
S. Garelik
  • Fonction : Auteur

Résumé

The deposition rate and uniformity in CVD reactors are function of transport phenomena. A mathematical model including the coupled mass transfer with hydrodynamics and heat transfer has been developed to predict reactant concentrations, flow patterns and temperature fields in a cold wall CVD reactor. The model consists of the partial differential equations describing the balance of mass, momentum, heat and species concentration and variable gas properties. The equations are solved numerically in two-dimensional, axisymmetric form using a control-volume-based finite difference technique. The model is applied to growth of silicon carbide layers obtained by LPCVD from the pyrolysis of tetramethylsilane. We present computed temperature, velocity and TMS concentration profiles. We compare predicted deposition rates with experimental results

Domaines

Articles anciens
Fichier principal
Vignette du fichier
ajp-jp4199303C316.pdf (887.82 Ko) Télécharger le fichier
Origine : Accord explicite pour ce dépôt

Dates et versions

jpa-00251373 , version 1 (04-02-2008)

Identifiants

Citer

H. Chehouani, S. Benet, B. Armas, C. Combescure, A. Figueras, et al.. Transport phenomena in a cold wall vertical reactor for metalorganic vapor phase growth of β-SiC layers. Journal de Physique IV Proceedings, 1993, 03 (C3), pp.C3-131-C3-138. ⟨10.1051/jp4:1993316⟩. ⟨jpa-00251373⟩

Collections

AJP
36 Consultations
136 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More