THEORETICAL STUDY OF HIGH INJECTION EFFECTS IN EBIC MEASUREMENTS OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN SILICON - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal de Physique IV Proceedings Année : 1991

THEORETICAL STUDY OF HIGH INJECTION EFFECTS IN EBIC MEASUREMENTS OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN SILICON

Jean-Luc Maurice
Y. Marfaing
  • Fonction : Auteur

Résumé

The presence of carriers in the grain boundary (GB) space charge is taken into account in solving numerically Poisson's equation. This allows one, by using a schematic description of electron excitation, to investigate the theoretical behaviour of the GB recombination velocity, measured by EBIC, in high injection conditions.

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jpa-00250699 , version 1 (04-02-2008)

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Jean-Luc Maurice, Y. Marfaing. THEORETICAL STUDY OF HIGH INJECTION EFFECTS IN EBIC MEASUREMENTS OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN SILICON. Journal de Physique IV Proceedings, 1991, 01 (C6), pp.C6-77-C6-82. ⟨10.1051/jp4:1991614⟩. ⟨jpa-00250699⟩

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