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Article Dans Une Revue Journal de Physique III Année : 1996

An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects

Jean-Luc Leray
  • Fonction : Auteur
Philippe Paillet
  • Fonction : Auteur
Jean-Luc Autran

Résumé

This paper presents a review of the main properties of the two types of buried oxides that currently dominate the Silicon-On-Insulator (SOI) technologies: SIMOX (Separation by IMplantation of OXygen) and BESOI (Bond and Etch-Back SOI) materials. After examining the main advantages of SOI structure for radiation-hardened electronics, we present different advanced technological processes of such buried oxides and review their physical characteristics as well as their charge trapping properties under ionizing radiations.

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jpa-00249548 , version 1 (04-02-2008)

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Jean-Luc Leray, Philippe Paillet, Jean-Luc Autran. An Overview of Buried Oxides on Silicon: New Processes and Radiation Effects. Journal de Physique III, 1996, 6 (12), pp.1625-1646. ⟨10.1051/jp3:1996205⟩. ⟨jpa-00249548⟩

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