Influence of dislocations on dark current of multicrystalline silicon N+ P junction
Résumé
A detailed characterization of the dark current in large grained polycristalline silicon cells is given. This current is greatly influenced by the presence of dislocations. A new model for the shunt current transmitted by these defects is given. It is found that this current is proportional to exp (qV/2 kT). The comparison between the three essential components of the dark current (diffusion, recombination and shunt component) indicates that the shunt component is the dominant one at low applied voltage (V < 300 mV ). Even at higher voltage (V >300 mV ) the shunt component is comparable to the diffusion one when the dislocation density is greater than 105 cm-2. The computed results are in agreement with experimental ones.
Domaines
Articles anciensOrigine | Accord explicite pour ce dépôt |
---|