Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs
Résumé
We have investigated by cathodoluminescence the influence of atomic hydrogen on the minority carrier recombination at dislocations and sub-boundaries in GaAs. These extended defects have been introduced by plastic deformation at high temperature. The recombining character of these defects is not qualitatively changed by hydrogen.
Mots clés
- GaAs
- GaAs:H
- extended defects
- cathodoluminescence
- sub boundaries
- dislocations
- minority carrier recombination
- III V semiconductor
- subboundary structure
- plastic deformation
- minority carriers
- luminescence of inorganic solids
- impurity dislocation interactions
- III V semiconductors
- hydrogen
- gallium arsenide
- electron hole recombination
Domaines
| Origine | Accord explicite pour ce dépôt |
|---|---|
| Licence |
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