Thin film solar cells using impure polycrystalline silicon
Résumé
Epitaxial solar cells have been studied with the view of using rather impure upgraded metallurgical grade (UMG)-Si as a substrate material. It is confirmed that transition elements have segregated during ingot growth and that impurities such as B, P, Al do not diffuse from substrate to epilayers, so that the latter have resistivity and electron diffusion length adequate to produce good solar cells. 10.3 % efficiency cells have been obtained. By spectral response measurements, interpreted through a simple model, it is shown that this efficiency is limited by both absorption and collection losses in the thin active epilayer. With the help of a brief economic analysis, this technique is compared to the other ones able to make use of cheap UMG-Si.
Mots clés
carrier lifetime
electrical conductivity of crystalline semiconductors and insulators
elemental semiconductors
segregation
semiconductor epitaxial layers
silicon
solar cells
semiconductor
thin film solar cells
impure polycrystalline material
epitaxial cells
absorption losses
metallurgical grade
substrate material
transition elements
impurities
resistivity
electron diffusion length
spectral response measurements
collection losses
thin active epilayer
economic analysis
10.3 percent
Si:P
Si:B
Si:Al
Domaines
Articles anciensOrigine | Accord explicite pour ce dépôt |
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