Resistivity annealing properties of aluminium thin films after ion implantation at liquid helium temperatures
Résumé
We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at liquid helium temperatures. The Al-implantation produces a curve resembling that of neutron-irradiated Al ; low-dose H- implantation results in two strongly enhanced stage I recovery peaks, while high-dose H- implantation annealing results suggest that H-ordering or a phase transformation takes place.
Mots clés
aluminium
annealing
electrical conductivity of solid metals and alloys
hydrogen ions
ion beam effects
ion implantation
metallic thin films
oxygen
recovery
resistivity annealing curves
stage I recovery peaks
Al thin film
Al ion implantation
ordering
H ion implantation
O ion implantation
liquid He temperatures
phase transformations
| Origine | Accord explicite pour ce dépôt |
|---|