ON THE ELECTRICAL ACTIVITY OF THE ((-1)11)-(1(-1)2) STEPS IN THE SILICON Σ = 3 TWIN BOUNDARY - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal de Physique Colloques Année : 1990

ON THE ELECTRICAL ACTIVITY OF THE ((-1)11)-(1(-1)2) STEPS IN THE SILICON Σ = 3 TWIN BOUNDARY

Jean-Luc Maurice

Résumé

Electron beam induced current (EBIC) measurements in the scanning electron microscope have been performed on a Σ = 3 twin boundary with ((-1)11) - (1(-1)2) steps in silicon. The two interface planes, together with the two different dislocations at their intersections, frequently show no detectable electrical activity. Such an activity however appears when the step density is high. In this case, transmission electron microscopy (TEM) shows that a large proportion of the step dislocations is decorated by nano-precipitates.

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jpa-00230360 , version 1 (04-02-2008)

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Jean-Luc Maurice. ON THE ELECTRICAL ACTIVITY OF THE ((-1)11)-(1(-1)2) STEPS IN THE SILICON Σ = 3 TWIN BOUNDARY. Journal de Physique Colloques, 1990, 51 (C1), pp.C1-581-C1-586. ⟨10.1051/jphyscol:1990191⟩. ⟨jpa-00230360⟩

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