ON THE ELECTRICAL ACTIVITY OF THE ((-1)11)-(1(-1)2) STEPS IN THE SILICON Σ = 3 TWIN BOUNDARY
Résumé
Electron beam induced current (EBIC) measurements in the scanning electron microscope have been performed on a Σ = 3 twin boundary with ((-1)11) - (1(-1)2) steps in silicon. The two interface planes, together with the two different dislocations at their intersections, frequently show no detectable electrical activity. Such an activity however appears when the step density is high. In this case, transmission electron microscopy (TEM) shows that a large proportion of the step dislocations is decorated by nano-precipitates.
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Articles anciens
Origine : Accord explicite pour ce dépôt
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