EVOLUTIONS OF GRAIN BOUNDARY RECOMBINATION ACTIVITY IN POLYCRYSTALLINE SILICON INVESTIGATED BY LBIC MAPPING AND DLTS
Résumé
In large grained polycrystalline silicon, the recombination activity of grain boundaries (G.B.'s) is typically heterogeneous. This activity may be evaluated by the determination of interfacial recombination velocity S ; which is related to the presence of deep trap levels at G.B.'s.
Domaines
Articles anciensOrigine | Accord explicite pour ce dépôt |
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