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Article Dans Une Revue Journal de Physique Colloques Année : 1989

HIGH SPATIAL RESOLUTION ELECTRON BEAM INDUCED CURRENT

Jean-Luc Maurice

Résumé

Spatial resolution δR, of the Electron Beam Induced Current (EBIC) contrast can be defined as the width at half maximum of the contrast profile accross a defect. It depends mainly on beam spreading, but in the case of grain boundaries (GBs), it is also very dependent on the minority carrier diffusion length L. In silicon with L = 100 µm for instance δR = 40 µm at 30 kV [l], value far too large to establish correlations with microstructure.

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jpa-00229644 , version 1 (04-02-2008)

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Jean-Luc Maurice. HIGH SPATIAL RESOLUTION ELECTRON BEAM INDUCED CURRENT. Journal de Physique Colloques, 1989, 50 (C6), pp.C6-153-C6-153. ⟨10.1051/jphyscol:1989613⟩. ⟨jpa-00229644⟩

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