REAL-SPACE TRANSFER IN HETEROJUNCTION FET's : MONTE-CARLO SIMULATION AND ANALYTICAL MODEL
Résumé
We present the results of a Monte-Carlo simulation of the NERFET, a field effect transistor where the real-space transfer of channel electrons over a heterojunction barrier gives rise to a negative differential resistance (NDR) effect on drain current. An analytical expression of the real-space current is built upon our simulation results. By this way, we construct an analytical model of the NERFET which shows good agreement with Monte-Carlo results without the need of adjusting any parameter.
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