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Article Dans Une Revue Journal de Physique Colloques Année : 1984

ELECTRONIC STRUCTURE OF SEMICONDUCTOR INTERFACES

F. Herman
  • Fonction : Auteur

Résumé

Although we now have a good understanding of the electronic structure of idealized semiconductor interfaces, including the nature of localized interface states, recent experimental studies suggest that the atomic structure of actual interfaces is considerably more complicated than that described by the idealized models used in current theoretical research. If we are to understand the electronic properties of interfaces more fully, it is essential that we develop more realistic structural models for interfaces. We will illustrate the strengths and weaknesses of present-day theories by discussing the electronic structure of Ge/GaAs, Si/SiO2, and Pd2Si/Si(111) interfaces. We will also discuss the development of improved atomic-scale models for interfaces between crystalline and amorphous semiconductors.

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jpa-00224177 , version 1 (04-02-2008)

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F. Herman. ELECTRONIC STRUCTURE OF SEMICONDUCTOR INTERFACES. Journal de Physique Colloques, 1984, 45 (C5), pp.C5-375-C5-384. ⟨10.1051/jphyscol:1984558⟩. ⟨jpa-00224177⟩

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