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Article Dans Une Revue Journal de Physique Année : 1989

Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation

J. Thibault-Desseaux
  • Fonction : Auteur
J.L. Putaux
A. Bourret
  • Fonction : Auteur
H.O.K. Kirchner
  • Fonction : Auteur

Résumé

Experimentally observed configurations of the integration of glide dislocations into a Σ = 9 boundary are explained in analogy to cross-slip in the bulk. Crystallographically possible dissociations of the bulk dislocations into complete or imperfect dislocations of the DSC lattice are discussed. The energetically most favorable configurations serve as activated intermediary steps in thermal activation involving both glide and climb. Thermal activation blocks 60° dislocations at the boundary, but helps screw dislocations to traverse it.
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Dates et versions

jpa-00211079 , version 1 (04-02-2008)

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Citer

J. Thibault-Desseaux, J.L. Putaux, A. Bourret, H.O.K. Kirchner. Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation. Journal de Physique, 1989, 50 (18), pp.2525-2540. ⟨10.1051/jphys:0198900500180252500⟩. ⟨jpa-00211079⟩

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