Article Dans Une Revue IEEE Journal of the Electron Devices Society Année : 2025

Silicon-Richness Impact for Enhanced Charge-Trapping in 3D NAND Flash Memories

Résumé

We propose an optimization of N/Si ratio of charge trap silicon nitride (CT-SiN) for 3D NAND flash memory applications. By resorting to density functional theory (DFT) calculations and experimental analyses, we studied the properties influencing SiN-based devices performance, namely charge-retention ability, multi-leveling, and program/erase (P/E) endurance. Our results demonstrate that the optimal N/Si ratio to enhance performance is approximately 1.13. Moreover, we show the possibility of further enhancement of device performance by tuning H concentration. This research provides guidance for N/Si ratio selection and H concentration to enhance significantly the performance of CT-SiN in next-generation 3D NAND flash memories.

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hal-05592297 , version 1 (15-04-2026)

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Tomoya Nagahashi, Atsushi Oshiyama, Mauro Boero, Hajime Karasawa, Ryota Horiike, et al.. Silicon-Richness Impact for Enhanced Charge-Trapping in 3D NAND Flash Memories. IEEE Journal of the Electron Devices Society, In press, pp.1-1. ⟨10.1109/JEDS.2025.3638173⟩. ⟨hal-05592297⟩
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