Article Dans Une Revue Applied Physics Letters Année : 2026

Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping

Camille Sonneville
Dominique Planson
Cyril Buttay

Résumé

In this work, using micro-Raman spectroscopy mapping, we propose a methodology to separate the stress effect from the n-doping effect on A1LO and E2H GaN phonon modes frequency for low n-doped (<1017 cm−3) GaN layers grown on various substrates (GaN, sapphire, and silicon). This methodology shows a linear relation between the two phonon modes, in which the slope corresponds to GaN biaxial stress coefficients ratio KA1LOB/KE2HB and is 0.76 ± 0.01. Our value may act as a useful guideline for selecting or refining KE2HB and KA1LOB values. Samples that are mainly biaxially stressed show good agreement with the linear relation independently of the substrate. As for GaN/GaN samples, the change of slope indicates that layers are predominantly under dislocation-induced stress. However, independently of the substrate, the y-intercept increases with the n-carrier concentration, which provides a qualitive estimation of the net doping.

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Dates et versions

hal-05577908 , version 1 (02-04-2026)

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Citer

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Thomas Kaltsounis, Vishwajeet Maurya, Hala El Rammouz, et al.. Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping. Applied Physics Letters, 2026, 128 (12), ⟨10.1063/5.0325369⟩. ⟨hal-05577908⟩
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