Article Dans Une Revue Nano Letters Année : 2021

Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO

Résumé

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects. This concept exploits the spinlayer locking mechanism present in centrosymmetric materials with local dipole fields, where a weak electric field can easily manipulate just one of the spin channels. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to k R = 0.08 A -1 ), leading to a

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hal-05534173 , version 1 (03-03-2026)

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Rong Zhang, Antimo Marrazzo, Matthieu Jean Verstraete, Nicola Marzari, Thibault Daniel Pierre Sohier. Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO. Nano Letters, 2021, 21 (18), pp.7631-7636. ⟨10.1021/acs.nanolett.1c02322⟩. ⟨hal-05534173⟩
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