Integration of color centers into silicon photonic structures
Résumé
In recent years, silicon has emerged as a promising platform for quantum photonics, driven by its technological maturity and compatibility with large-scale photonic integration. Among the various approaches to implementing quantum emitters in silicon, color centers have gained significant attention due to their ability to operate as single-photon sources in the near-infrared, making them highly relevant for quantum communication and information processing. However, to fully exploit their potential, efficient integration into silicon photonic structures is essential to enhance photon extraction, control emission properties, and enable scalable architectures. This review provides a comprehensive overview of the progress in integrating color centers into silicon photonic structures. The most promising color centers studied to date are presented, along with the various methods developed for their creation. Strategies for coupling these emitters to photonic structures, such as waveguides and resonant cavities, are examined, highlighting their impact on emission properties, including enhanced radiative rates via the Purcell effect and improved control over emission directivity. Finally, key challenges and future directions are discussed to further advance silicon-based quantum emitters toward practical applications in quantum technologies.