Article Dans Une Revue Materials for Quantum Technology Année : 2025

Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies

Résumé

Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond. Growth methods aiming to increase the area of SCD are an active research area. Native color centers offer a sensitive probe for local crystal quality in such novel materials e.g. via their reaction to stress. In this work, we investigate individual native nitrogen-vacancy (NV) centers in SCD layers manufactured via laterally overgrowing hole arrays in a heteroepitaxially grown large-scale substrate. Heteroepitaxy has become a common tool for growing large SCDs; however, achieving the high crystal quality needed for quantum applications remains a challenge. In the overgrown layer, we identify NV centers with spin-decoherence times in the order of hundreds of µs, comparable to high-purity homoepitaxial SCD. We quantify the effective crystal stress in different regions of the overgrown layer, indicating a low stress overall and a stress reduction in the diamond layer above the holes.

Fichier principal
Vignette du fichier
Oshnik et al. - 2025 - Nitrogen-vacancy centers in epitaxial laterally overgrown diamond towards up-scaling of color cente.pdf (1.43 Mo) Télécharger le fichier
Origine Fichiers éditeurs autorisés sur une archive ouverte
Licence

Dates et versions

hal-05378106 , version 1 (22-11-2025)

Licence

Identifiants

Citer

Nimba Oshnik, Sebastian Westrich, Nina Burmeister, Oliver Roman Opaluch, Lahcene Mehmel, et al.. Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies. Materials for Quantum Technology, 2025, 5, pp.025201. ⟨10.1088/2633-4356/adce50⟩. ⟨hal-05378106⟩
252 Consultations
78 Téléchargements

Altmetric

Partager

  • More