Communication Dans Un Congrès Année : 2025

TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs

Résumé

The n-type and p-type operations of 22 nm Fully Depleted Silicon on Insulator (FDSOI) Three-Independent-Gates Reconfigurable Field Effect Transistors (TIG-RFETs) are simulated, incorporating Schottky contacts to the drift-diffusion model. Key-features are selected and adjusted to fit experimental results, like: Schottky barrier height (SBH), direct tunnelling and presence of traps. The inclusion and correct adjustment of these parameters reveals the importance of strong electrostatic control over the energetic barrier at the metal-semiconductor junctions. We extend this analysis with a study of the theoretical impact of the metal-semiconductor interface position under the source-drain gates coupled with the length of the ungated regions.

Fichier principal
Vignette du fichier
Camera-ready_SISPAD2025.pdf (5.17 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Licence

Dates et versions

hal-05350790 , version 1 (06-11-2025)

Licence

Identifiants

Citer

J.M. Gonzalez-Medina, L.-C. Hung, Y. He, A. Arsalane, O. Baumgartner, et al.. TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs. 2025 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2025, Grenoble, France. pp.1-4, ⟨10.1109/SISPAD66650.2025.11186366⟩. ⟨hal-05350790⟩
63 Consultations
159 Téléchargements

Altmetric

Partager

  • More