Thermomechanical simulation of SiC MOSFETs under Extreme Short-Circuit Stress: A 2D multiphysics damage and failure analysis [POSTER]
Résumé
The model couples Joule heating from semiconductor physics with heat transfer, including Al phase change. A cooling phase follows peak heating to complete the thermal cycle. Mechanical behavior is simulated using the mapped thermal field as input, with elastoplastic laws and SiO₂-ILD damage evaluated via a Rankine criterion. Repetitive thermomechanical cycling tracks crack growth and cumulative stress over successive power pulses.
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Poster-COMSOL-Conference-2025-Amsterdam-VMS-HAL.pdf (1.49 Mo)
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