Poster De Conférence Année : 2025

Thermomechanical simulation of SiC MOSFETs under Extreme Short-Circuit Stress: A 2D multiphysics damage and failure analysis [POSTER]

Résumé

The model couples Joule heating from semiconductor physics with heat transfer, including Al phase change. A cooling phase follows peak heating to complete the thermal cycle. Mechanical behavior is simulated using the mapped thermal field as input, with elastoplastic laws and SiO₂-ILD damage evaluated via a Rankine criterion. Repetitive thermomechanical cycling tracks crack growth and cumulative stress over successive power pulses.

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Dates et versions

hal-05345679 , version 1 (04-11-2025)
hal-05345679 , version 2 (11-11-2025)

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  • HAL Id : hal-05345679 , version 1

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Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau. Thermomechanical simulation of SiC MOSFETs under Extreme Short-Circuit Stress: A 2D multiphysics damage and failure analysis [POSTER]. Comsol Conference, Oct 2025, Amsterdam, Netherlands. ⟨hal-05345679v1⟩
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