Status and progress of GaN-based millimeter-wave transistors and vertical GaN-on-silicon devices at IEMN
Résumé
Recent advancements in GaN-based millimeter-wave transistors and vertical GaN-on-silicon devices are driving the evolution of next-generation RF and power electronic technologies. At the forefront of this progress is the strategic use of epilayer engineering in aggressively scaled GaN HEMTs, which enables enhanced efficiency, robustness, and power density at millimeter-wave frequencies. However, state-of-the-art GaN HEMTs still face key challenges, including suboptimal efficiency in the Ka-band and beyond (<50%), increased trapping effects, diminished electron confinement, and reliability concerns in deeply scaled (<150 nm) devices operating at high power densities (>3 W/mm). This seminar will present innovative solutions based on advanced epitaxial heterostructures that significantly improve device performance and reliability. In parallel, the development of fully vertical GaN devices on large-diameter silicon substrates addresses longstanding issues such as the thermal mismatch between GaN and Si. By employing localized substrate removal techniques alongside optimized epitaxy and processing, recent breakthroughs include the demonstration of 1200 V-class vertical GaN pn diodes with avalanche capability, low on-resistance, and high current handling. Together, these technological advances mark a critical step forward in realizing the full potential of GaN for high-performance RF and power electronics, and position GaN-based platforms as key enablers of future energy and communication systems.
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