Top and cross-sectional Failure Analysis investigations by AFM, FIB and SEM: elucidation of an unwanted layer growth in integrated microelectronic chip
Résumé
To guarantee the protection and reliability of the highly integrated microelectronic chips, the integrity deposition of the passivation layer is a key parameter. After the detection of the unwanted layer growth, on the Silicon Nitride (Si3N4) passivation during the fabrication of a 3D Silicon microelectronic chip, top and cross- sectional failure analysis investigations are performed to identify the nature and process origin of this unwanted layer growth. Atomic Force Microscope (AFM) topographies of the surfaces and Scanning Electron Microscope (SEM) analysis coupled with Energy dispersive X-ray analysis (EDS) acquired for top and FIB (by Focused Ion Beam) cross-sectional observations are combined to reveal the structure of the defect inside the multi-stack layers. These complementary investigations unveil that the unwanted material is a Nickel layer, on the Silicon Nitride passivation layer. Analysis of the cross-section reveals the nickel growth mechanism and the presence of a crack in the silicon nitride laye
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