Study of temperature-dependent breakdown in AlGaN/GaN normally-off HEMT under drain step-stress
Résumé
This paper investigates the temperature-dependent breakdown of commercially available GaN-on-Si power transistors during off-state drain step-stress. This setup allows us to obtain novel results on commercially available 650V p-GaN HEMT subjected to step-stress under various conditions of temperature and gate voltage. Previously observed breakdown mechanisms are compared with the one observed on the current structure and a physical interpretation is proposed to explain the phenomenon. Activation energy, Weibull parameters and failure analysis are explored to provide understanding on the failure mechanisms.
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