Communication Dans Un Congrès Année : 2025

Study of temperature-dependent breakdown in AlGaN/GaN normally-off HEMT under drain step-stress

Résumé

This paper investigates the temperature-dependent breakdown of commercially available GaN-on-Si power transistors during off-state drain step-stress. This setup allows us to obtain novel results on commercially available 650V p-GaN HEMT subjected to step-stress under various conditions of temperature and gate voltage. Previously observed breakdown mechanisms are compared with the one observed on the current structure and a physical interpretation is proposed to explain the phenomenon. Activation energy, Weibull parameters and failure analysis are explored to provide understanding on the failure mechanisms.

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hal-05323117 , version 1 (21-10-2025)

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  • HAL Id : hal-05323117 , version 1

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Christale Crouard, Jonathan Godillon, Jean-François Pieprzyk, Patrick Tounsi. Study of temperature-dependent breakdown in AlGaN/GaN normally-off HEMT under drain step-stress. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05323117⟩
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