Long-Term Drift of a Bandgap Voltage Reference by Molding Compound Oxidation during Extended Thermal Aging
Résumé
Lifetime assessments only based on silicon wear-out mechanisms are insufficient to explain electrical parameter drifts of devices aged at high temperatures for long durations. This complexifies predictions for semiconductor device aging. An alternative approach has been adopted in this study to explain these electrical drifts, by considering the interaction of the silicon and its encapsulation. Specifically, this analysis is performed on a degraded Bandgap Voltage Reference circuit embedded in an encapsulated Integrated Circuit, previously aged during High Temperature Operating Life test conditions for 6500 h at a junction temperature of 165 °C. Aged samples showed oxidized and deformed packages, that can explain the electrical parameter drift measured in the circuit as recovery was observed after samples decapsulation. This is explained by reduced interaction between silicon and package
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