Dynamic Characterization by Double Pulse Testing of Si Power MOSFETs and IGBTs at Cryogenic Temperature for Superconducting Applications
Résumé
The aerospace industry has been investigating superconducting applications as a solution for aircraft electrification. Superconducting applications require on-board cryogenic systems, which can also be used to cool power electronics in order to minimize their losses and improve the overall efficiency of the electrical chain. Power converters consist of switches, which are semiconductor devices. Semiconductors are highly temperature-dependent, and their behavior changes at cryogenic temperatures. Therefore, to design a power converter, it is essential to characterize the power components at cryogenic temperatures to ensure safe converter operation. Si Power MOSFETs are highly efficient at a cryogenic temperature of 80 K, with a loss reduction of 80% [1] (see Figure). The characterization of the most commonly used power electronic devices such as IGBTs (Punch Through and Non-Punch Through), PIN Diodes (General Purpose and Fast Recovery), Schottky Diodes (Si and SiC), SiC MOSFET and HEMT GaN have been performed in static and dynamic mode to determine the optimal operating temperature. The main results of our investigations will be presented and discussed. The aim of this work is to provide a reliable framework for the selection of power devices that are well suited to superconducting applications.