Communication Dans Un Congrès Année : 2025

Improving the investigation of defects properties through temperature dependent Modulated Photoluminescence

Résumé

Modulated Photoluminescence (MPL) has established itself as a key tool for defect characterization in semiconductor materials, as highlighted in Ref. { , }. Previous studies on high-frequency MPL have shown that the frequency dependence of the MPL phase can either be monotonic or exhibit a local minimum, forming a V-shape. The emergence of this feature in MPL spectra results from charge carrier capture and re-emission processes. In { }, simulations were conducted to study the impact of excitation power on the phase diagram, emphasizing the importance of multi-power characterization for identifying specific defect signatures. In this article, we focus on the temperature dependence of MPL phase Bode diagrams exhibiting a V-shape, which allowed us to extract three key defect parameters: the energy level position, defect density, and carrier capture cross-section of minority carriers. However, it is crucial to distinguish between V-shapes related to emission processes and those associated with carrier capture. Our study specifically addresses the latter through the analysis of experimental results obtained under realistic conditions. The analysis of the local phase shift minimum as a function of temperature enabled us to identify the essential defect properties. At low injection levels, the V-shape is mainly attributed to the re-emission of minority carriers by defects, a phenomenon particularly pronounced at high temperatures. In contrast, at high injection levels, other mechanisms influence the appearance of the V-shape, especially at low temperatures. These findings provide new insights into defect dynamics and their temperature-dependent behavior, offering a solid framework for interpreting experimental data in photovoltaic materials. From an experimental perspective, MPL measurements performed on multiple samples yielded significant results. For instance, in p-doped CIGS material, a defect located 0.13 eV below the conduction band was identified, aligning with literature data { }. Similarly, measurements on AlGaAs samples revealed a defect-relatedn activation energy of 0.11 eV. Preliminary analyses of additional samples also suggest the presence of phase shifts associated with multiple defects. Further investigations are planned to better characterize these defects and assess their combined impact on material performance.

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Dates et versions

hal-05293245 , version 1 (01-10-2025)

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  • HAL Id : hal-05293245 , version 1

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Hiba Haddara, Sylvain Le Gall, Baptiste Bérenguier, Jean-François Guillemoles, Jean-Paul Kleider. Improving the investigation of defects properties through temperature dependent Modulated Photoluminescence. EUPVSEC, WIP Renewable Energies, Sep 2025, Bilbao, Spain. ⟨hal-05293245⟩
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