Phase-field simulations for RF switches: highlighting the benefits of GeTe over GST
Résumé
To better understand the crystallization mechanism of phase change material, the phase field method is used for the first time in simulations of the switching dynamics of RF switches. This method allows reproducing the nucleation and growth of the crystalline phase during amorphization and crystallization of the PCM. In this work, the quenching behavior of GeTe is compared with that of GST. The presented observations are consistent with the expected crystallization behavior and kinetics of each material. This work demonstrates the interest of the phase field model in PCM RF Switches simulation and highlights the interest of using GeTe rather than GST to obtain better amorphization quality in phase change materials.
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