Poster De Conférence Année : 2022

Impact of the polymer matrix in GaN nanowire-based devices for energy harvesting and force sensor applications

Résumé

Piezoelectric devices based on nanomaterials are a promising solution for energy harvesting and force sensor applications. Due to their high-crystalline quality and their large surface-to-volume ratio, 1D-nanostructures present higher mechanical resistance, flexibility, piezoelectric coefficients, as well as stronger piezoelectric response in comparison with their bulk and 2D-film counterparts. Piezoelectric active layer embedding NWs are consequently characterized by enhanced electromechanical conversion per surface unit [1, 2]. This improvement of the power density allows suppling compact microelectronic devices such as medical implants or micro-sensors. This enhanced electromechanical conversion efficiency also opens the way for developing highly sensitive and spatially resolved force sensors used for precise surface recognition or biometric authentication. In addition, the specific use of GaN NWs, characterized by high-thermal and chemical stability, radiative hardness and bio-compatibility, makes GaN NWs-based piezoelectric devices eligible for applications in hostile or medical environment. In order to be efficient, the architecture of the device must be adapted to the final application as well as the environmental solicitation. In the case of force sensors, the objective is a greater sensibility to small deformations and electrical contacts permitting a spatial resolution. For energy harvesting systems, the conversion of the mechanical deformation or vibration into electrical signal must be as efficient as possible for generating high power average output and therefore supply micro-devices. The performances of piezoelectric devices preliminary depends on the electromechanically conversion efficiency of the active layer. Its architecture, consisted by GaN NWs array embedded into polymer matrix in this study, must thus be adapted to the specificities of the final application. The characteristics of the GaN NWs as well as the choice of the matrix are thus of critical importance. In this work, we investigate the influence of the polymer matrix embedding the GaN NWs on the device conversion capacities. Various matrixes, presenting different Young modulus, are considered. The output voltage and small force response are investigated. In addition, the influence of the matrix on the surface charges in the GaN NWs, known to strongly affect the output voltage, is also discussed. This work was supported by the French National Research Agency as part of the “Investissements d’Avenir” program (ANR-10-LABX-0035, Labex NanoSaclay) through the NanoVIBES project and by the ANR-PiezoSens project (ANR-19-CE42-0016) References [1] N.Gogneau et al., Semicond. Sci. Technol., vol.31, 103002 (2016) [2] N.Jamond et al., Nanotechnology, vol.27, 325403 (2016)

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hal-05284624 , version 1 (30-09-2025)

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  • HAL Id : hal-05284624 , version 1

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Amaury Chevillard, Maria Tchernycheva, Noëlle Gogneau. Impact of the polymer matrix in GaN nanowire-based devices for energy harvesting and force sensor applications. International Symposium on the Physics of Semiconductors and Applications, Jul 2022, Jeju City, Jeju Island, South Korea. ⟨hal-05284624⟩
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