Low losses optical devices on GaP/GaAs platform
Résumé
Here we study Gallium Phosphide-based devices made from GaP/GaAs epilayers in the framework of non-linear photonic integration. We demonstrate state-of-the art propagation losses in the near infrared and discuss this value in terms of roughness and crystal defects.
Domaines
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|---|
| Licence |