Article Dans Une Revue Microelectronics Reliability Année : 2025

Low-voltage Schottky p-GaN HEMT properties under extreme repetitive short-circuit operation conditions: 2DEG pinch-off, stability, aging, robustness and failure-modes analysis - Selected and Extended Full Paper from ESREF'24

Résumé

The authors proposed in-depth experimentation and physical analysis showing the extreme robustness capability of low-voltage GaN HEMT in single and repetitive short-circuit. A 2DEG pinch-off behavior is analyzed depending on VDS voltage and charges’ trapping / de-trapping relaxation time. A new drain–gate leakage-current mechanism at turn-off is suggested to explain the ultimate thermal-runaway failure-mechanism.

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hal-05185367 , version 1 (24-07-2025)

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Frédéric Richardeau, L. Ghizzo, D. Trémouilles, S. Vinnac. Low-voltage Schottky p-GaN HEMT properties under extreme repetitive short-circuit operation conditions: 2DEG pinch-off, stability, aging, robustness and failure-modes analysis - Selected and Extended Full Paper from ESREF'24. Microelectronics Reliability, 2025, 173, pp.115871. ⟨10.1016/j.microrel.2025.115871⟩. ⟨hal-05185367⟩
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