Low-voltage Schottky p-GaN HEMT properties under extreme repetitive short-circuit operation conditions: 2DEG pinch-off, stability, aging, robustness and failure-modes analysis - Selected and Extended Full Paper from ESREF'24
Résumé
The authors proposed in-depth experimentation and physical analysis showing the extreme robustness capability of low-voltage GaN HEMT in single and repetitive short-circuit. A 2DEG pinch-off behavior is analyzed depending on VDS voltage and charges’ trapping / de-trapping relaxation time. A new drain–gate leakage-current mechanism at turn-off is suggested to explain the ultimate thermal-runaway failure-mechanism.
Mots clés
- Low-voltage power GaN High-Electron-Mobility-Transistor reliability and failure-modes robustness functional stress aging mechanism drift mechanism charges trapping-detrapping 2DEG pinch-off short-circuit operation condition repetitive short-circuit operation condition
- robustness
- functional stress
- repetitive short-circuit operation condition
- short-circuit operation condition
- 2DEG pinch-off
- charges trapping-detrapping
- drift mechanism
- aging mechanism
- robustness functional stress
- reliability and failure-modes
- Low-voltage power GaN High-Electron-Mobility-Transistor
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MER-FULL PAPER - REVISED VERSION - V4 - MINOR - 18072025 - HAL.pdf (911.58 Ko)
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