Article Dans Une Revue Applied Physics Letters Année : 2010

Picosecond acoustics in p-doped piezoelectric semiconductors

Résumé

We demonstrate by experiment and theoretical analysis that the presence of built-in electric fields near the (111) and (-1-1-1) surfaces of p-doped GaAs causes efficient generation of acoustic waves due to the laser-induced inverse piezoelectric effect. At the same time, the generation efficiency from the electron-hole-phonon deformation potential is shown to be reduced. The polarity of the acoustic pulse is inverted when changing the laser irradiated surface from (111) to (-1-1-1). The results have ramifications for optically controlled piezoelectric ultrasound transducers.

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Dates et versions

hal-05173470 , version 1 (21-07-2025)

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P. Babilotte, Pascal Ruello, G. Vaudel, T. Pezeril, D. Mounier, et al.. Picosecond acoustics in p-doped piezoelectric semiconductors. Applied Physics Letters, 2010, 97 (17), pp.174103. ⟨10.1063/1.3501125⟩. ⟨hal-05173470⟩
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