Article Dans Une Revue Japanese Journal of Applied Physics Année : 2025

Cryogenic atomic layer etching of SiO 2 based on cyclic CF 4 /Ar plasma

Madjid Adjabi
  • Fonction : Auteur
Thomas Tillocher
Philippe Lefaucheux
  • Fonction : Auteur
Eva Kovacevic
  • Fonction : Auteur

Résumé

Abstract This study demonstrates the feasibility of a cryogenic atomic layer etching (cryo-ALE) process for Silicon Dioxide (SiO 2 ) using a CF 4 plasma adsorption step and a surface removal step based on Argon plasma. In situ ellipsometry was used to monitor the amount of SiO 2 etched during each cycle. To improve the process, several parameters were optimized. First, the sample temperature was varied from 20 °C, temperature of which CF 4 is in etching regime, to −130 °C, switching the plasma process to a deposition regime. Then, CF 4 plasma parameters, including the pressure, inductively coupled plasma (ICP) power and its duration were studied. For a lower pressure, a higher ICP power and a longer plasma time, the process switches from etching to over-deposition. Finally, after optimization of the CF 4 plasma parameters, an average etch rate per cycle (EPC) of 0.4 nm/cycle was found with a process synergy determined to be 99%.

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Dates et versions

hal-05141960 , version 1 (03-07-2025)

Identifiants

Citer

Madjid Adjabi, Thomas Tillocher, Philippe Lefaucheux, Eva Kovacevic, Rémi Dussart. Cryogenic atomic layer etching of SiO 2 based on cyclic CF 4 /Ar plasma. Japanese Journal of Applied Physics, 2025, 64 (6), pp.06SP19. ⟨10.35848/1347-4065/add7e5⟩. ⟨hal-05141960⟩
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