InP/GaAsSb Double Heterojunction Bipolar Transistor Characterization and Compact Modelling up to 500 GHz
Résumé
This paper presents a new methodology to accurately characterize InP bipolar transistors up to 500 GHz. Following design optimization of RF test structures specifically developed for the on-wafer TRL calibration technique, InP/GaAsSb Double Heterojunction Bipolar Transistors have been successfully characterized up to 500 GHz. Moreover, the HICUM compact model was validated against measurements for different operating conditions and various geometries for the first time up to 500 GHz. The physics-based compact model and the associated scalable parameter extraction flow allowed us to demonstrate the scalability of this THz InP DHBT technology, offering possibilities for further design-level explorations. State-of-the-art cut-off frequencies of this THz transistor technology featuring fMAX reaching 1 THz for transistor geometries with 0.15 µm-emitter-widths were experimentally verified and confirmed by the compact model predictions.
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