Operando Photoemission Imaging of the Energy Landscape from a 2D Material-Based Field-Effect Transistor
Résumé
As the integration of transition metal dichalcogenides (TMDC) becomes more advanced for optoelectronics, it is increasingly relevant to develop tools that can correlate the structural properties of the materials to their electrical output. To do so, the determination of the electronic structure must go beyond the hypothesis that the properties of the pristine material remain unaffected after device integration, which generates changes in the dielectric environment, including electric fields that are likely to renormalize the electronic spectrum. Here, we demonstrate that nanobeam photoemission spectroscopy is a well-suited tool to unveil the device energy landscape under operando conditions. Both the gate-induced vertical field and the drain in-plane vectorial electric field can be determined with a sub µm resolution. We conduct a correlative description of a field effect transistor, to connect its bias-modified energy landscape with transistor electrical output. The method appears highly suited to unveil how the actual geometry of the flake (thickness, edge effect, presence of structural defects…) is driving the current flow within the device. Lastly, the method appears fully compatible with traditional fabrication for devices, therefore making it relevant for systematic rational optimization of TMDC-based electronic devices.
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