Communication Dans Un Congrès Année : 2013

Compact modeling solutions for OxRAM memories

Résumé

Emerging non-volatile memories based on resistive switching mechanisms pull intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (namely OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present an compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level.

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Dates et versions

hal-05006780 , version 1 (26-03-2025)

Identifiants

Citer

Marc Bocquet, Damien Deleruyelle, Hassen Aziza, Christophe Muller, Jean-Michel Portal. Compact modeling solutions for OxRAM memories. 2013 IEEE Faible Tension Faible Consommation (FTFC), Jun 2013, Paris, France. pp.1-4, ⟨10.1109/FTFC.2013.6577779⟩. ⟨hal-05006780⟩
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