Article Dans Une Revue Journal of Materials Chemistry A Année : 2025

Characterization and reuse of SiC flakes generated during electrochemical etching of 4H-SiC wafers

Résumé

Silicon carbide porous flakes are produced during the electrochemical etching (ECE) of n-doped 4H-SiC wafers. The differences in porosity between the Si-face and C-face allow for the adsorption of various dyes.

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Dates et versions

hal-04921225 , version 1 (30-01-2025)

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Matteo Barcellona, Vanessa Spanò, Roberto Fiorenza, Salvatore Scirè, Thomas Defforge, et al.. Characterization and reuse of SiC flakes generated during electrochemical etching of 4H-SiC wafers. Journal of Materials Chemistry A, 2025, 13 (4), pp.3034-3044. ⟨10.1039/d4ta07035f⟩. ⟨hal-04921225⟩
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