Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer
Résumé
This paper presents our recent developments on optical amplification in photonic chips that were developed as part of the European project OPHELLIA (On-chip PHotonics Erbium-doped Laser for LIdar Applications). A photonic chip, integrating an optical amplifier based on Al 2 O 3 :Er 3+ doped with 1.5×1026 ions/m” over a length of 7 cm, and Si 3 N 4 multiplexers, is shown to have an internal net gain of 20 dB on the active section and an on-chip gain of 4.5 dB at the chip output for a signal at 1550 nm. These results demonstrate the potential of this technology for developing high-performance integrated optical amplifiers.