This article presents a method for detecting temperatures distribution of two Silicon Carbide (SiC) Mosfets parallelized. Two Thermal Sensitive Electrical Parameters (TSEP), which are on state resistance (Rdson) and threshold voltage (Vth), are introduced. The comparison of the temperature interpolated by Vth and the one interpolated by Rdson shows disparity which can lead to individual junction temperature detection. Vth instability and its measurement are discussed for SiC devices. Experiment results show that depending on the instability of the Vth and the sensibility of the two TSEPs at certain temperatures, the combination of different TSEPs could be a solution to extract maximum junction temperature of parallelized devices.