Analysis and 3D TCAD simulations of EDSR in an industrially-compatible FD-SOI device - Archive ouverte HAL
Poster De Conférence Année : 2024

Analysis and 3D TCAD simulations of EDSR in an industrially-compatible FD-SOI device

Résumé

One of the main advantages spin qubits possess over other quantum-computing architectures is the potential to leverage the existing classical semiconductor industrial infrastructure to generate scalable quantum-information-processing systems. The classical semiconductor industry already benefits from a mature set of simulation tools, often referred to as Technology Computer Aided Design (TCAD) tools, dedicated to characterizing and predicting the features of current and future devices. As we transition toward using semiconductors for quantum applications, it seems likely we will adopt the best practices from classical electronics. This includes the use of TCAD tools.

With respect to simulations, there exist two main differences between classical and quantum systems:
1.        While classical electronics are operated at room temperature, spin-qubit devices are operated at cryogenic temperatures.
2.        There exist operational principles that are only relevant for quantum systems (e.g. quantum superpositions).
These differences lead to difficulties in applying TCAD tools optimized for classical systems to quantum devices and suggest a need for specialized software dedicated to understanding quantum systems. We use such a software (QTCAD) to investigate electric-dipole spin-resonance (EDSR) for an electron  in the presence of a micromagnet in an industrially-compatible STMicroelectronics fully-depleted silicon on insulator (FD-SOI) device [see (a), electron wavefunctions shown in (b)]. We compute the applied EDSR drive (voltage) amplitude necessary to achieve Rabi oscillations [first row of (c)] on the order of MHz. Moreover, because our simulations give us access to the Hamiltonian describing the device, we can go beyond the rotating-wave approximation to consider leakage out of the qubit subspace [second row of (c)] and bound the single-qubit gate fidelities achievable with the studied EDSR scheme. We also consider how these results are affected by the presence of impurities. This work hi ghlights how specialized TCAD tools can help steer the design of quantum devices.

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Dates et versions

hal-04784575 , version 1 (15-11-2024)

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  • HAL Id : hal-04784575 , version 1

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Pericles Philippopoulos, Benjamin Bureau, Philippe Galy, Salvador Mir, Eva Dupont-Ferrier, et al.. Analysis and 3D TCAD simulations of EDSR in an industrially-compatible FD-SOI device. Silicon Quantum Electronics Workshop (SIQEW 2024), Sep 2024, Davos, Switzerland. ⟨hal-04784575⟩

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