The anisotropic dependence of the velocity of surface acoustic waves (SAW) on silicon is explored using surface Brillouin light scattering. Measurements of the SAW velocity are compared to a numerical model that takes into account the native thin amorphous oxide layer formed at the top surface of the silicon wafer. The model accounts for material loss and provides a relative estimate for the backscattered intensity resulting from the ripple effect. For the (100) sample considered, a thickness of 4 nm fits well with experimental data, considering material constants of amorphous silica for the oxide. A global phase velocity decrease of −11 m/s per nanometer of silica thickness is predicted for surface phonons at frequencies around 16 GHz.