Exploring the combined advantages of III-V and Si semiconductors in a single chip has been an interesting and challenging area of materials development for quite some time. Intergration of excellent electronic, thermal and mechanical properties of Si with equally critical photonic properties of III-V materials with their direct bandgap is deemed a way forward for a technology-based future. Recent works published in the literature have shown significant advances toward heteorgeneous epitaxy of high quality materials on Si. Few exciting topics for the implementation of the III-V on Si substrate are photonic, optoelectronic devices and more interestingly hydrogen production. Amongst all the “quantum enabled” technologies being explored, photon-based quantum communication is of key societal relevance since it facilitates long-distance quantum cryptography along with safe and fast information processing between communicating parties. While the theoretical concepts underpinning the so-called “quantum revolution” have been largely accepted, their implementation to feasible real-world applications is still part of a long-term vision. An essential element is single photon emitting devices. Compatibility of single photon sources (SPS) with existing telecommunication networks is one of the utmost importance along with high operating rate and photon purity. It is desired for new devices to emit at 1.55 μm, which fits the lowest attenuation (C-band telecom) window of optical fibers, therefore InP based structures are attractive candidates [1]. On hydrogen production side, many countries have invested substantially towards renewable energy in terms of photovoltaic (solar) and wind energy generation stations. Despite extensive investments even today major part of energy supply is coming from fossil fuels. Solar fuels remedy this shortfall by allowing solar energy to be stored in the form of chemical bonds, such as in hydrogen molecules. As water is the only emission product from its reaction with oxygen, when Hydrogen is used as fuel cell. This position Hydrogen as climate-neutral fuel to power mobility. Desired III-V semiconductors alloys needs to fulfill the basic requirements of having the bandgap or straddled more than the 1.23eV. In this talk, I will present our first results about the growth of InP grown on 6° off Si(100) substrate. Optimization of growth parameters to minimize the defects due to the differences in thermal expansion coefficient and lattice constants between III-V materials and Si will be discussed. Initial results about photoelectrochemical (PEC) tests using these samples and our approach to realize the InGaAlAs membranes with embedded InAs quantum dots (QDs). [1] Benyoucef, M. et. al. Appl. Phys. Lett. 2013, 103, doi:10.1063/1.4825106