Communication Dans Un Congrès Année : 2019

Reduction of the growth inhibition and substrate oxidation during the first steps of alumina ALD on Si by an in situ N2-NH3 plasma surface pre-treatment

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hal-04743574 , version 1 (18-10-2024)

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  • HAL Id : hal-04743574 , version 1

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Giorgos Gakis, Hugues Vergnes, Fuccio Cristiano, Constantin Vahlas, Brigitte Caussat, et al.. Reduction of the growth inhibition and substrate oxidation during the first steps of alumina ALD on Si by an in situ N2-NH3 plasma surface pre-treatment. RafALD, GDR RafALD, Nov 2019, Toulouse, France. ⟨hal-04743574⟩
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