Article Dans Une Revue Optics Express Année : 2024

Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates

Gad Kombila
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Résumé

We report on Sb-based interband cascade lasers simultaneously grown on GaSb, GaAs and Si substrates. 8 µm x 2 mm devices exhibited similar threshold currents around 40 mA at 20°C and achieved continuous-wave (CW) operation up to 65°C on GaSb, GaAs and Si substrates despite a dislocation density of ∼ 4.10 8 cm -2 for both mismatched substrates. In the CW regime the output power of the devices emitting at 3.3 µm exceeded 30 mW/facet at 20°C. ICLs on GaAs and Si were subsequently aged at 50°C with an injection current of 200 mA, i.e. five times the laser-threshold current. No degradation was observed after 500 h of CW operation, demonstrating the high performance of ICLs and their tolerance to dislocations.

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hal-04739941 , version 1 (16-10-2024)

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Maeva Fagot, Daniel Andrés Díaz-Thomas, Audrey Gilbert, Gad Kombila, Michel Ramonda, et al.. Interband cascade lasers grown simultaneously on GaSb, GaAs and Si substrates. Optics Express, 2024, 32 (7), pp.11057. ⟨10.1364/OE.514069⟩. ⟨hal-04739941⟩
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