Evaluation and thermal ageing of power semiconductor die attachment based on porous film electrodeposition - Archive ouverte HAL
Communication Dans Un Congrès Année : 2024

Evaluation and thermal ageing of power semiconductor die attachment based on porous film electrodeposition

Résumé

Driven by applications in the field of electric mobility, power electronics face the challenge of being able to operate at higher power densities. 3D packaged power modules appear as a promising solution, but are difficult to manufacture. Electrodeposited copper allows for flexibility in the module's design. This paper evaluates a die attachment method based on the thermocompression of electrodeposited porous copper films. A characterization study of this solution, including its behaviour after thermal ageing, is carried out.

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Dates et versions

hal-04738783 , version 1 (15-10-2024)

Identifiants

  • HAL Id : hal-04738783 , version 1

Citer

G Janod, L Chachay, J Schoenleber, Y Avenas, D Bouvard, et al.. Evaluation and thermal ageing of power semiconductor die attachment based on porous film electrodeposition. ESREF 2024, Sep 2024, Parma, Italy. ⟨hal-04738783⟩
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